The invention is concerned with the integration method to form the embedding silicon germanium source-drain structure, it is: uses the polycrystalline silicon mask and the polycrystalline silicon interlayer as mask to process the silicon hollow erode and the silicon germanium extension, simultaneity removes the polycrystalline silicon mask and the polycrystalline silicon interlayer after achieves the silicon germanium extension of the source / leaking area, processes light doping drain (LDD) to form ONO sidewall interlayer, the heavy doping of the source-drain area, the formation of the self-aiming silicide, and the following working procedure. |