The invention is concerned with the CMOS chip sealing manufacture processing without core dielectric layer, the steps are: provides the conducting layer with the first surface and the second surface; forms the first film on the first surface, makes the design of the conducting layer to form the designing circuit layer; forms the welding covering layer on the designing circuit layer, and makes the design of the welding covering layer in order to emerge the part area of the designing circuit layer; forms the second film on the welding covering layer, removes the first film, configures the CMOS chip on the first surface, makes the electronic connection for the CMOS chip to the designing circuit layer; forms the sealing colloid to cover the designing circuit layer, fixes the CMOS chip to the designing circuit layer, removes the second film. |