| Original document(12 pages) 中文版 |
This invention relates to a kind of storages including multiple storage units containing base plates, shallow ditch isolators, clearance walls, through oxidation layers and floating grids, in which, the shallow ditch isolators are placed in the base plates for defining active regions, the clearance walls are placed at the side walls of the shallow ditch isolators and higher than the isolators, the through oxidation layer and the floating grid layer are set on the active regions, after the side wall of the shallow ditch isolator forms a clearance wall, then the isolator is etched so the clearance wall is higher than the isolator. |
Application Number
申请号 |
200510099523 |
Application Date
申请日 |
2005.09.13 |
| Title 名称 |
Storing unit forming method, high coupling rate storing device and forming method thereof |
Publication Number
公开号 |
1933125 |
Publication Date
公开日 |
2007.03.21 |
| Approval Pub. Date |
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Granted Pub. Date |
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| International Classification 分类号 |
H01L21/8239;H01L21/28;H01L21/336;H01L27/105;H01L29/788 |
Applicant(s) Name
申请人 |
Maode Science & Technology Co., Ltd. |
| Address 地址 |
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| Inventor(s) Name 发明人 |
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| Attorney & Agent 代理人 |
taofeng bei houyu |
| More information 更 多 信 息 |
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