| Original document(15 pages) 中文版 |
This invention relates to a kind of non-volatile memory cells, its manufacturing method and a manufacturing method for non-volatile memory bodies, in which, several stack grating structures are formed on the base plate and several doped regions are formed in the base of the sides of the grating structures, then, several clearance walls are formed on the side walls of the grating structures, after that, several conductive pad layers are formed on part of the exposed doped regions to reduce resistance value of the doped region of the memory cells. |
Application Number
申请号 |
200510103412 |
Application Date
申请日 |
2005.09.15 |
| Title 名称 |
Non-volatile memory cell, producing method thereof and method for producing non-volatile memory body |
Publication Number
公开号 |
1933126 |
Publication Date
公开日 |
2007.03.21 |
| Approval Pub. Date |
|
Granted Pub. Date |
|
| International Classification 分类号 |
H01L21/8239;H01L21/8247;H01L27/105;H01L27/115 |
Applicant(s) Name
申请人 |
Wanghong Electronic Co., Ltd. |
| Address 地址 |
|
| Inventor(s) Name 发明人 |
|
| Attorney & Agent 代理人 |
shouning zhanghua hui |
| More information 更 多 信 息 |
|
|
|