Original document(24 pages)  中文版
    This invention relates to a film transistor structure and a manufacturing method for LCD base plates, in which, the method includes: a, providing a base plate, b, forming a penetration layer with multiple grooves on the surface of the base plate, c, forming a first blocking layer on the surface of the grooves, d, filling a first metal layer on the blocking layer to let the surface of the first metal layer at the same plane of the surface of the photic layer, e, forming a first insulation layer and a semiconductor layer orderly, f, forming a pattern second metal layer and exposing part of the semiconductor layer to form a drain structure and a source structure of a film transistor and g, forming a transparent conduction layer on part of the photic layer and second metal layer surface of the drain structure.
Application Number
申请号
200610136386 Application Date
申请日
2006.10.17
Title 名称 Thin film transistor structure and substrate producing method for liquid crystal display device
Publication Number
公开号
1933128 Publication Date
公开日
2007.03.21
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L21/84;H01L21/768;H01L21/336;H01L21/28;H01L27/12;H01L23/522;H01L23/532;H01L29/786;H01L29/49;H01L29/423
Applicant(s) Name
申请人
Youda Photoelectric Co., Ltd.
Address 地址
Inventor(s) Name 发明人
Attorney & Agent 代理人 renmo wen
More information 更  多  信  息


 Related patents information
Liquid crystal display device and its lower substrate
Method for making picture element structure
Manufacturing method of picture element structure
Method of mfg. lower substrate of LCD device by using three masks
Active element array substrate, color filter substrate and methods for manufacturing them
Method for producing liquid crystal display device substrate
Pixel structure and its mfg. method
Picture element structure and producing method thereof
Picture element module and display device
Google
Note:All patent data come from State Intellectual Property Office of the People's Republic of China. If there were discrepancies between here and the State Intellectual Property office, the later is more accurate. The patent data is only for public exchange and learning purposes. We are not responsible for the adverse consequences with unverified use of the data.