Original document(13 pages)  中文版
    This invention relates to a dual inlaying structure including a base, a dielectric layer, a metal hard mask layer, a protection layer and a conduction layer, in which, the base includes a conduction region, the dielectric layer is matched on the base, the metal hard mask layer is matched on the dielectric layer, the protection layer is matched on the metal hard mask layer, in which, the protection layer, the metal hard mask layer and part of the dielectric layer have grooves and an open-end is in the dielectric layer under the groove exposing the conduction region, apart from that, the conduction layer is matched in the grooves and the open-end.
Application Number
申请号
200510103922 Application Date
申请日
2005.09.15
Title 名称 Complex layer structure and producing method and double-mosaic and interconnector structure and capacitor
Publication Number
公开号
1933129 Publication Date
公开日
2007.03.21
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L23/00;H01L23/52;H01L23/482;H01L21/00;H01L21/768;H01L21/28
Applicant(s) Name
申请人
Lianhua Electronic Co., Ltd.
Address 地址
Inventor(s) Name 发明人
Attorney & Agent 代理人 taofeng bei houyu
More information 更  多  信  息


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