| Original document(15 pages) 中文版 |
To provide a semiconductor device on which electrodes can be highly densely provided and a semiconductor chip with little restriction in integrated circuit design can be used. The semiconductor device includes the semiconductor chip 10 having the integrated circuit 12 formed, electrodes 14 formed in a first region of the semiconductor chip 10 and arrayed in a plurality of columns and rows, a resin protrusion 20 formed in a second region surrounding a first region of the semiconductor chip 10, and a plurality of electric connections 30 formed on the resin protrusion 20 and electrically connected with the plurality of electrodes 14. |
Application Number
申请号 |
200610129132 |
Application Date
申请日 |
2006.09.11 |
| Title 名称 |
Semiconductor device |
Publication Number
公开号 |
1933137 |
Publication Date
公开日 |
2007.03.21 |
| Approval Pub. Date |
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Granted Pub. Date |
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| International Classification 分类号 |
H01L23/482;H01L23/50 |
Applicant(s) Name
申请人 |
Seiko Epson Corp. |
| Address 地址 |
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| Inventor(s) Name 发明人 |
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| Attorney & Agent 代理人 |
ligui liang |
| More information 更 多 信 息 |
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