| Original document(32 pages) 中文版 |
A contact structure having silicide layers, a semiconductor device employing the same, and methods of fabricating the contact structure and semiconductor device are provided. The contact structure includes a first conductive region and a second conductive region on a substrate. An insulating layer covers the first and second conductive regions. A first contact hole and a second contact hole are formed through the insulating layer and expose the first and second conductive regions, respectively. A first silicide layer having a first thickness is on the first conductive region exposed by the first contact hole. A second silicide layer having a second thickness different than the first thickness is on the second conductive region exposed by the second contact hole. |
Application Number
申请号 |
200610077873 |
Application Date
申请日 |
2006.05.10 |
| Title 名称 |
Contact structure having silicide layers, semiconductor device employing the same, and methods of fabricating the contact structure and semiconductor device |
Publication Number
公开号 |
1933141 |
Publication Date
公开日 |
2007.03.21 |
| Approval Pub. Date |
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Granted Pub. Date |
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| International Classification 分类号 |
H01L23/522;H01L23/485;H01L27/088;H01L21/768;H01L21/28;H01L21/8234 |
Applicant(s) Name
申请人 |
Samsung Electronics Co., Ltd. |
| Address 地址 |
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| Inventor(s) Name 发明人 |
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| Attorney & Agent 代理人 |
linyu qing xieli na |
| More information 更 多 信 息 |
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