| Original document(41 pages) 中文版 |
A dry etching method for forming tungsten wiring having a tapered shape and having a large specific selectivity with respect to a base film is provided. If the bias power density is suitably regulated, and if desired portions of a tungsten thin film are removed using an etching gas having fluorine as its main constituent, then the tungsten wiring having a desired taper angle can be formed. |
Application Number
申请号 |
200610099986 |
Application Date
申请日 |
2000.07.24 |
| Title 名称 |
Wiring and manufacturing method thereof, semiconductor device comprising said wiring, and dry etching method |
Publication Number
公开号 |
1933142 |
Publication Date
公开日 |
2007.03.21 |
| Approval Pub. Date |
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Granted Pub. Date |
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| International Classification 分类号 |
H01L23/522;H01L23/528;H01L23/532;H01L29/786;H01L29/423;H01L29/49;H01L21/768;H01L21/336;H01L21/28;H01L21/3213 |
Applicant(s) Name
申请人 |
Semiconductor Energy Lab |
| Address 地址 |
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| Inventor(s) Name 发明人 |
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| Attorney & Agent 代理人 |
liya fei liangyong |
| More information 更 多 信 息 |
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