Original document(23 pages)  中文版
    This invention relates to a fuse structure of semiconductor elements including a fuse layer between up and down insulation layers on a semiconductor base electrically connected with other metal layers with the help of dielectric layer holes, the resistivity of the fuse layer can be adjusted according to its material, the fuse layer has many mutual separated blocks, at least one connection block and a thermal buffer block, which is coupled to blocks close to the burning point or blocks with the burning point to provide a new heat conduction path. When a connection block with narrow area is overheat since the current density passing it is high, a thermal buffer block and blocks connected with it can distribute the heat generated near it uniformly and good for radiation.
Application Number
申请号
200510099537 Application Date
申请日
2005.09.13
Title 名称 Fuse of semiconductor element
Publication Number
公开号
1933145 Publication Date
公开日
2007.03.21
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L23/62;H01L23/525;H01L27/00;H01L21/768;H01L21/82;G11C17/14;G11C17/16
Applicant(s) Name
申请人
Lianhua Electronic Co., Ltd.
Address 地址
Inventor(s) Name 发明人
Attorney & Agent 代理人 taofeng bei houyu
More information 更  多  信  息


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