Original document(11 pages)  中文版
    This invention relates to a distribution method for cathode figures in an integrated threshold converting thyristor, in which, the cathode comb strips are arranged in a subarea complex mode and arranged in rectangle distribution in the subarea and peripheral distribution among the subareas in different modes and positions and sizes of the comb-strips are allowed to be modified. The complex method includes: the subarea formed by diving a fan area and a loop is an isosceles ladder zone and a basic distribution unit of the comb strips , the fan section is one dividing the round surface into m same areas, when m is rather low, the section is close to a rectangular distribution, when m is high, it approaches to a peripheral distribution, and the loop refers to dividing the round surface into n coaxial loop regions in different areas in terms of positive polygons, the value of which is related to the diameter of the chip and length of the comb strip, the larger the n, the more of the sum of the comb strips, which is good for current.
Application Number
申请号
200610032312 Application Date
申请日
2006.09.26
Title 名称 Arranging method for cathode pattern in integrated gate pole changing thyratron transistor
Publication Number
公开号
1933152 Publication Date
公开日
2007.03.21
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L27/02;H01L27/082;H01L21/82;H01L21/8222
Applicant(s) Name
申请人
Zhuzhou Nanche Shidai Electrical Co., Ltd.
Address 地址
Inventor(s) Name 发明人
Attorney & Agent 代理人 zhaohong
More information 更  多  信  息


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