The invention provides a semiconductor component and a method for manufacturing a metal-insulator-metal capacitor in a mosaic structure. A first interlevel conductive joint hole is formed on and through an interlevel dielectric layer and a dielectric etch stop layer. The dielectric etch stop layer is positioned under the interlevel dielectric layer, and the conductive joint hole is contacted with a first inner connection structure provided under the dielectric etch stop layer. A metal-insulator-metal capacitor comprises a first plate electrode, a second plate electrode and a second interlevel conductive joint hole. The first plate electrode is formed on a second inner connection structure provided under the dielectric etch stop layer. The second plate electrode is formed above the dielectric etch stop layer, and is approximately in parallel with the first plate electrode, and overlaps the first plate electrode. A second interlevel conductive joint hole is formed on and through the interlevel dielectric layer and is contacted with the second plate electrode. The invention advoids a high leakage current together with a large capacitor generated by using an ultra-thin gate oxide layer. |