| Original document(36 pages) 中文版 |
To provide a semiconductor device which combines resistance against noises and resistance against a surge current. A protection circuit 110 in the semiconductor device 100 has an n-MOS 112 electrically connected to a ground line GND, and a p-MOS 111 connected between a power line VDD and the n-MOS 112. The p-MOS 111 conducts a current to electrically connect the power line VDD to the n-MOS 112 when a given bias voltage is generated between the power line VDD and the ground line GND, that is, an operating voltage is applied to the power line VDD. |
Application Number
申请号 |
200610153720 |
Application Date
申请日 |
2006.09.08 |
| Title 名称 |
Semiconductor device |
Publication Number
公开号 |
1933155 |
Publication Date
公开日 |
2007.03.21 |
| Approval Pub. Date |
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Granted Pub. Date |
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| International Classification 分类号 |
H01L27/02 |
Applicant(s) Name
申请人 |
Oki Electric Ind Co., Ltd. |
| Address 地址 |
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| Inventor(s) Name 发明人 |
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| Attorney & Agent 代理人 |
yangkai liuzong jie |
| More information 更 多 信 息 |
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