Original document(22 pages)  中文版
    A semiconductor device has: a memory element which is arranged on a semiconductor substrate and records information therein; a terminal for inputting first voltage for recording the information to the memory element and second voltage lower than the first voltage for reading out the information from the memory element; and an electrostatic discharge protection circuit which is connected to the terminal. The electrostatic discharge protection circuit includes a diode whose cathode is connected to the first terminal and whose anode is connected to a ground potential, and a first MOS transistor whose drain and gate are connected to the terminal and whose source and back gate are connected to the ground potential.
Application Number
申请号
200610154211 Application Date
申请日
2006.09.14
Title 名称 Semiconductor device
Publication Number
公开号
1933156 Publication Date
公开日
2007.03.21
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L27/04
Applicant(s) Name
申请人
Canon K. K.
Address 地址
Inventor(s) Name 发明人
Attorney & Agent 代理人 wangyong gang
More information 更  多  信  息


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