Original document(15 pages)  中文版
    A complementary metal oxide semiconductor (CMOS) device and a method for fabricating the same are provided. The CMOS image sensor includes: a first conductive type substrate including a trench; a channel stop layer formed by using a first conductive type epitaxial layer over an inner surface of the trench; a device isolation layer formed on the channel stop layer to fill the trench; a second conductive type photodiode formed in a portion of the substrate in one side of the channel stop layer; and a transfer gate structure formed on the substrate adjacent to the photodiode to transfer photo-electrons generated from the photodiode.
Application Number
申请号		 200510097439 Application Date
申请日		 2005.12.28
Title 名称 Complementary metal oxide semiconductor image sensor and method for fabricating the same
Publication Number
公开号		 1933167 Publication Date
公开日		 2007.03.21
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L27/146;H01L21/8232
Applicant(s) Name
申请人		 Magnachip Semiconductor Ltd.
Address 地址
Inventor(s) Name 发明人
Attorney & Agent 代理人 xuqian yanggong mei
More information 更  多  信  息


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