Original document(22 pages)  中文版
    This invention relates to a compensated MOS image sensor for integrating single transistor static random accessing memories including a substrate with a pixel array, a logic circuit and multiple transistors static random accessing memories (1T-SRAM), in which, said pixel array, logic circuit and the 1T-SRAM are isolated by multiple shallow grooves, and only an optical mask is added to the logic technics of each element of the 1T-SRAM to be integrated into said compensated MOS image sensor.
Application Number
申请号		 200510103846 Application Date
申请日		 2005.09.12
Title 名称 Complementary metal oxide semiconductor image sensor and producing method thereof
Publication Number
公开号		 1933168 Publication Date
公开日		 2007.03.21
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L27/146;H01L21/82
Applicant(s) Name
申请人		 Lianhua Electronic Co., Ltd.
Address 地址
Inventor(s) Name 发明人
Attorney & Agent 代理人 chenxiao wen lixiao shu
More information 更  多  信  息


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