Original document(22 pages)  中文版
    An organic memory device having a memory active region formed by an embossing structure. This invention provides an organic memory device including a substrate, a first electrode formed on the substrate, an organic memory layer formed on the first electrode, a second electrode formed on the organic memory layer and an embossing structure provided at the organic memory layer to form a memory active region.
Application Number
申请号		 200610105951 Application Date
申请日		 2006.07.19
Title 名称 Organic memory device having memory active region formed by embossing structure
Publication Number
公开号		 1933172 Publication Date
公开日		 2007.03.21
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L27/28;H01L21/82
Applicant(s) Name
申请人		 Samsung Electronics Co., Ltd.
Address 地址
Inventor(s) Name 发明人
Attorney & Agent 代理人 taofeng bei houyu
More information 更  多  信  息


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