Original document(23 pages)  中文版
    A method of selectively forming a germanium structure within semiconductor manufacturing processes removes the native oxide from a nitride surface in a chemical oxide removal (COR) process and then exposes the heated nitride and oxide surface to a heated germanium containing gas to selectively form germanium only on the nitride surface but not the oxide surface.
Application Number
申请号		 200610001285 Application Date
申请日		 2006.01.12
Title 名称 Selective deposition of germanium spacers on nitride
Publication Number
公开号		 1933175 Publication Date
公开日		 2007.03.21
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L29/00;H01L21/205;H01L21/336
Applicant(s) Name
申请人		 IBM
Address 地址
Inventor(s) Name 发明人
Attorney & Agent 代理人 wangmao hua
More information 更  多  信  息


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