Original document(11 pages)  中文版
    This invention relates to a SBT-BST heterogeneous dielectric material, its composition method and the application, in which, said material takes a Si chip as the substrate and is composed of multi-layer substrate electrode and multi-layer film depositing on it, the electrode is composed of a Si chip and SiO2, Ti and Pt films depositing on the surface of the Si chip orderly, the multi-layer film is formed by SBT and BST films of N periods stacked alternately, and N is 3-99. The composition method of said material includes: depositing the SBT and BST films on a Pt/Ti/SiO2/Si multi-layer substrate electrode alternately with the PLD technology. The application of the material includes: taking the material as the substrate and preparing IC active device MOS transistors on the SBT-BST heterogeneous dielectric material multi-layer film of the substrate with the standard IC technics.
Application Number
申请号		 200610116873 Application Date
申请日		 2006.09.29
Title 名称 Strontium bismuth tantalate-strontium barium titanate heterogeneous dielectric material and synthesizing method and application thereof
Publication Number
公开号		 1933176 Publication Date
公开日		 2007.03.21
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L29/51;H01L29/78;H01L21/28;H01L21/31;H01L21/336
Applicant(s) Name
申请人		 Huadong Normal Univ.
Address 地址
Inventor(s) Name 发明人
Attorney & Agent 代理人 chengzong de shizhao
More information 更  多  信  息


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