Original document(11 pages)  中文版
    A semiconductor device is provided. The semiconductor device includes a substrate, a gate, spacers, and a source and a drain. The gate is formed on the substrate, has side walls, and is formed of a silicide material. The spacers are formed on the sidewalls of the gate. The source and the drain are formed on the substrate. The gate protrudes above the spacers.
Application Number
申请号		 200610154168 Application Date
申请日		 2006.09.15
Title 名称 Semiconductor device and method of fabricating semiconductor device
Publication Number
公开号		 1933181 Publication Date
公开日		 2007.03.21
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L29/78;H01L29/423;H01L21/336;H01L21/28
Applicant(s) Name
申请人		 Dongbu Electronics Co., Ltd.
Address 地址
Inventor(s) Name 发明人
Attorney & Agent 代理人 gujin wei liuji fu
More information 更  多  信  息


 Related patents information
Organic light emitting diode display
Appartus and method for ink-jetting and gas-supplying unit
Image sensor and method of fabricating the same
Array inkjet printhead
Display device and manufacturing method thereof
Google
Note:All patent data come from State Intellectual Property Office of the People's Republic of China. If there were discrepancies between here and the State Intellectual Property office, the later is more accurate. The patent data is only for public exchange and learning purposes. We are not responsible for the adverse consequences with unverified use of the data.