This invention relates to a film transistor including a grid, a grid insulation layer, a channel layer, a source, a drain and an ohm contacting layer, in which, the grid insulation layer covers the grid, the channel layer is on the grid insulation layer above the grid, the source and the drain are set on the channel layer, the ohm contact layer is set between the channel layer and the source and the drain and composed of multiple films, so when the film transistor is at the off state, the leakage is less. |