Lithographic methods to reduce stacking fault nucleation sites and structures having reduced stacking fault nucleation sites

Original document(31 pages) 中文版

Epitaxial silicon carbide layers are fabricated by forming features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The features include at least one sidewall that is orientated nonparallel (i.e., oblique or perpendicular) to the crystallographic direction. The epitaxial silicon carbide layer is then grown on the surface of the silicon carbide substrate that includes features therein.

Application Number
申请号

200580008637

Application Date
申请日

2005.02.14

Title 名称

Lithographic methods to reduce stacking fault nucleation sites and structures having reduced stacking fault nucleation sites

Publication Number
公开号

1934677

Publication Date
公开日

2007.03.21

Approval Pub. Date

Granted Pub. Date

International Classification 分类号

H01L21/04;H01L21/20;H01L21/205

Applicant(s) Name
申请人

Cree Inc.

Address 地址

Inventor(s) Name 发明人

Attorney & Agent 代理人

yangkai liangyong

More information 更多信息

Related patents information

Note:All patent data come from State Intellectual Property Office of the People's Republic of China. If there were discrepancies between here and the State Intellectual Property office, the later is more accurate. The patent data is only for public exchange and learning purposes. We are not responsible for the adverse consequences with unverified use of the data.