Original document(17 pages)  中文版
    A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.
Application Number
申请号		 200580007121 Application Date
申请日		 2005.01.24
Title 名称 Method for depositing high-quality microcrystalline semiconductor materials
Publication Number
公开号		 1934678 Publication Date
公开日		 2007.03.21
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L21/20
Applicant(s) Name
申请人		 United Solar Systems Corp.
Address 地址
Inventor(s) Name 发明人
Attorney & Agent 代理人 caisheng wei
More information 更  多  信  息


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