| Original document(34 pages) 中文版 |
A method for forming silicon dots, wherein a hydrogen gas (or and also a silane type gas) is introduced to a vacuum chamber (1), a plasma exhibiting a ratio of the luminous intensity of a silicon atom at a wave length of 288 nm to the luminous intensity of a hydrogen atom at a wave length of 484 nm of 10.0 or less is generated in the chamber, and silicon dots having a particle diameter of 20 nm or less are formed by the chemical sputtering under said plasma on a substrate. |
Application Number
申请号 |
200580009526 |
Application Date
申请日 |
2005.03.22 |
| Title 名称 |
Method and apparatus for forming silicon dots |
Publication Number
公开号 |
1934679 |
Publication Date
公开日 |
2007.03.21 |
| Approval Pub. Date |
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Granted Pub. Date |
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| International Classification 分类号 |
H01L21/203;H01L21/205;C23C14/14 |
Applicant(s) Name
申请人 |
Nissin Electric Co., Ltd. |
| Address 地址 |
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| Inventor(s) Name 发明人 |
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| Attorney & Agent 代理人 |
shenzhao kun |
| More information 更 多 信 息 |
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