| Original document(15 pages) 中文版 |
Hydrogen gas is introduced into a film forming chamber (10) wherein a silicon sputter target (2) and a substrate (S) whereupon a film is to be formed are arranged, high-frequency power is applied to the gas, and plasma having a value Halpha/SiH* at 0.3 to 1.3 is generated in the film forming chamber. The silicon sputter target (2) is chemically sputtered by the plasma, and a crystalline silicon thin film is formed on the substrate (S). The high-quality crystalline silicon thin film can be safely formed at a relatively low temperature at a low cost. |
Application Number
申请号 |
200580009563 |
Application Date
申请日 |
2005.03.22 |
| Title 名称 |
Method and equipment for forming crystalline silicon thin film |
Publication Number
公开号 |
1934680 |
Publication Date
公开日 |
2007.03.21 |
| Approval Pub. Date |
|
Granted Pub. Date |
|
| International Classification 分类号 |
H01L21/203;C23C14/14 |
Applicant(s) Name
申请人 |
Nissin Electric Co., Ltd. |
| Address 地址 |
|
| Inventor(s) Name 发明人 |
|
| Attorney & Agent 代理人 |
shenzhao kun |
| More information 更 多 信 息 |
|
|
|