| Original document(17 pages) 中文版 |
An impurity region with box-type impurity profile is formed. There is provided a method comprising the step of introducing a desired impurity in a surface of solid substratum and the step subsequent thereto of irradiating the surface of solid substratum with plasma so as to provide an impurity profile of nearly box type. |
Application Number
申请号 |
200580009622 |
Application Date
申请日 |
2005.03.17 |
| Title 名称 |
Method of impurity introduction, impurity introduction apparatus and semiconductor device produced with use of the method |
Publication Number
公开号 |
1934681 |
Publication Date
公开日 |
2007.03.21 |
| Approval Pub. Date |
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Granted Pub. Date |
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| International Classification 分类号 |
H01L21/265;H05H1/46 |
Applicant(s) Name
申请人 |
Matsushita Electric Ind Co., Ltd. |
| Address 地址 |
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| Inventor(s) Name 发明人 |
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| Attorney & Agent 代理人 |
zhangbei |
| More information 更 多 信 息 |
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