Original document(18 pages)  中文版
    A plasma chamber having a plasma source coil includes a chamber body, a plasma source coil, and an edge bushing. The chamber body includes a reaction space, which is limited by a sidewall, a lower exterior wall, and an upper dome, and forms plasma. The plasma source coil arranged on the dome includes M unit coils corresponding to an integer greater than '2'. The M unit coils having a predetermined turning number 'n' indicative of a positive integer are extended from a center bushing having a predetermined radius at a center part, and are spirally arranged along a circumference of the center bushing, such that the plasma is formed in the reaction space. The edge bushing arranged between the dome of the chamber body and the plasma source coil, and is configured in the form of a cylindrical shape to overlap with an edge of the wafer arranged in the reaction space.
Application Number
申请号
200580008980 Application Date
申请日
2005.03.24
Title 名称 Plasma chamber having plasma source coil and method for etching the wafer using the same
Publication Number
公开号
1934683 Publication Date
公开日
2007.03.21
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L21/3065
Applicant(s) Name
申请人
Adaptive Plasma Technology Corp.
Address 地址
Inventor(s) Name 发明人
Attorney & Agent 代理人 yangsheng beng yanggong mei
More information 更  多  信  息


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