| Original document(79 pages) 中文版 |
An object of the invention is to provide a method for manufacturing a thin film transistor in a self-aligning manner by using the droplet discharging method regardless of the accuracy of a discharge position for a droplet discharging device. In view of the object, an organic resin film or the like is applied and processed into a predetermined shape by etch-back, exposure, development and the like. By utilizing the organic resin film with the predetermined shape as a mask, a semiconductor layer containing an impurity of one conductivity type is etched. By utilizing the organic resin film with the predetermined shape, regions with different wettabilities are formed. |
Application Number
申请号 |
200580009603 |
Application Date
申请日 |
2005.03.15 |
| Title 名称 |
Manufacturing method of thin film transistor |
Publication Number
公开号 |
1934687 |
Publication Date
公开日 |
2007.03.21 |
| Approval Pub. Date |
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Granted Pub. Date |
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| International Classification 分类号 |
H01L21/336;H01L21/288;H01L21/3205;H01L29/417;H01L29/786 |
Applicant(s) Name
申请人 |
Semiconductor Energy Lab |
| Address 地址 |
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| Inventor(s) Name 发明人 |
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| Attorney & Agent 代理人 |
qinchen |
| More information 更 多 信 息 |
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