Original document(12 pages)  中文版
    Disclosed is a substrate for device bonding which enables to bond a device with high bonding strength to an Au electrode which is formed on the substrate composed of an aluminum nitride or the like by soldering at a low temperature using a soft solder metal having a low melting point such as an Au-Sn solder with an Au content of 10 weight%. The substrate for device bonding is characterized in that (i) a layer composed of a platinum group element, (ii) a layer composed of at least one transition metal element selected from the group consisting of Ti, V, Cr and Co, (iii) a barrier metal layer composed of at least one metal selected from the group consisting of Ag, Cu and Ni, and (iv) a solder layer composed of a solder mainly containing Sn or In are sequentially formed in this order on an Au electrode layer which is formed over the surface of the substrate for device bonding.
Application Number
申请号		 200580009474 Application Date
申请日		 2005.03.24
Title 名称 Substrate for bonding element and method of manufacturing the same
Publication Number
公开号		 1934688 Publication Date
公开日		 2007.03.21
Approval Pub. Date Granted Pub. Date
International Classification 分类号 H01L21/52;H01L23/12
Applicant(s) Name
申请人		 Tokuyama Corp.
Address 地址
Inventor(s) Name 发明人
Attorney & Agent 代理人 huye
More information 更  多  信  息


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