Original document(59 pages)  中文版
    A composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) materials from a substrate having such material(s) thereon. The composition includes a base component, such as a quaternary ammonium base in combination with an alkali or alkaline earth base, or alternatively a strong base in combination with an oxidant. The composition may be utilized in aqueous medium, e.g., with chelator, surfactant, and/or co-solvent species, to achieve high-efficiency removal of photoresist and/or SARC materials in the manufacture of integrated circuitry, without adverse effect on metal species on the substrate, such as copper, aluminum and/or cobalt alloys, and without damage to SiOC-based dielectric materials employed in the semiconductor architecture.
Application Number
申请号
200580010540 Application Date
申请日
2005.03.02
Title 名称 Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate
Publication Number
公开号
1938647 Publication Date
公开日
2007.03.28
Approval Pub. Date Granted Pub. Date
International Classification 分类号 G03F7/32;C11D1/62
Applicant(s) Name
申请人
Advanced Tech Materials
Address 地址
Inventor(s) Name 发明人
Attorney & Agent 代理人 wanghai chuan fanwei min
More information 更  多  信  息


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