| Original document(30 pages) 中文版 |
A high-frequency torsion oscillator having no puddle and capable of efficiently oscillating. The torsion oscillator has a beam structure having a constant cross section without puddle, and has electrodes disposed close to the side surfaces of the beam via gaps. The electrostatic capacity between the both is such that an electrostatic capacity change per unit torsion oscillation amount is maximum, and an adjustment is made such that an electrostatic capacity change ratio per unit ac voltage is maximum. This adjustment is made possible by controlling the thickness of the electrodes when a semiconductor process is used. In addition, the oscillator uses single crystal silicon and anisotropic etching is used to fabricate a beam shape, whereby a fine oscillator excellent in surface properties and high in Q value is produced. |
Application Number
申请号 |
200680000095 |
Application Date
申请日 |
2006.01.13 |
| Title 名称 |
Torsion resonator and filter using this |
Publication Number
公开号 |
1943110 |
Publication Date
公开日 |
2007.04.04 |
| Approval Pub. Date |
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Granted Pub. Date |
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| International Classification 分类号 |
H03H9/24;H01L29/84;B81B3/00 |
Applicant(s) Name
申请人 |
Matsushita Electric Ind Co., Ltd. |
| Address 地址 |
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| Inventor(s) Name 发明人 |
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| Attorney & Agent 代理人 |
taofeng bei |
| More information 更 多 信 息 |
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