Original document(30 pages)  中文版
    Disclosed is a method for producing carbon nanostructures which enables to stably produce carbon nanostructures having more uniform shapes with high purity. Specifically disclosed is a method for producing a carbon nanostructure (18) wherein a carbon crystal is grown on a crystal growth surface (17) of a catalyst base (14) containing a catalyst material (12) through vapor phase deposition, in particular a method wherein two or more kinds of gases including a raw material gas are brought into contact with the catalyst base (14) at the same time. The two or more kinds of gases may preferably be one or more kinds of raw material gases and one or more kinds of carrier gases. It is preferable that the carrier gas is brought into contact with the crystal growth surface (17), and the raw material gas is brought into contact with at least a part of regions other than the crystal growth surface (17) with which the carrier gas is in contact. The raw material gas may preferably contain ions, especially carbon ions.
Application Number
申请号
200580012691 Application Date
申请日
2005.01.28
Title 名称 Method for preparing carbon nano structure
Publication Number
公开号
1946635 Publication Date
公开日
2007.04.11
Approval Pub. Date Granted Pub. Date
International Classification 分类号 C01B31/02;B82B3/00
Applicant(s) Name
申请人
Sumitomo Electric Industries
Address 地址
Inventor(s) Name 发明人 Hikata Takeshi
Attorney & Agent 代理人 bianxin qin zhangbeng yuan
More information 更  多  信  息


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