This invention discloses a method for preparing period tower-shaped ZnO monocrystal nanostructure. The nanostructure is layered and period tower-shaped ZnO monocrystal nanostructure assembled from hexagonal units from bottom to top on a Si wafer, and has a length of 20-30 mum, a bottom diameter of 3-10 mum, and a top diameter of 5-15 nm. The method comprises: utilizing Si wafer as the substrate, Zn powder as the evaporation source, and Ar as the carrier gas, and growing nanoscale ZnO monocrystals at 550-700 deg.C and atmospheric pressure on the substrate by heat evaporation. The nanoscale ZnO monocrystals have period tower-shaped nanostructure. The method has such advantages as simple process, low cost, high repeatability, and large-scale periodic tower-shaped ZnO monocrystal nanostructure on the substrate. The obtained nanostructure can be used as cathode material of field emission microelectronics, and probe of STM and AFM. |