Original document(28 pages)  中文版
    An MRAM cell comprises a magnetic metal layer and a magnetic sensing device in close proximity to the magnetic metal layer. One end of the magnetic metal layer is coupled with a word line transistor, while the other end of the magnetic metal layer is coupled to a first bit line. The magnetic sensing device can be coupled with a second bit line. The magnetic metal layer can be used to both program and read the cell, eliminating the need for a second current lien in the cell.
Application Number
申请号		 200610146358 Application Date
申请日		 2006.11.10
Title 名称 Systems and methods for reading and writing a magnetic memory device
Publication Number
公开号		 1967715 Publication Date
公开日		 2007.05.23
Approval Pub. Date Granted Pub. Date
International Classification 分类号 G11C11/02
Applicant(s) Name
申请人		 Macronix Int Co., Ltd.
Address 地址
Inventor(s) Name 发明人 Ho Chiahua
Attorney & Agent 代理人 wangyang
More information 更  多  信  息


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